Invention Grant
US08472188B2 Semiconductor power module, inverter, and method of manufacturing a power module
有权
半导体功率模块，逆变器及制造电源模块的方法
- Patent Title: Semiconductor power module, inverter, and method of manufacturing a power module
- Patent Title (中): 半导体功率模块，逆变器及制造电源模块的方法
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Application No.: US12707207Application Date: 2010-02-17
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Publication No.: US08472188B2Publication Date: 2013-06-25
- Inventor: Keisuke Horiuchi , Atsuo Nishihara , Hiroshi Hozoji , Michiaki Hiyoshi , Takehide Yokozuka
- Applicant: Keisuke Horiuchi , Atsuo Nishihara , Hiroshi Hozoji , Michiaki Hiyoshi , Takehide Yokozuka
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-035819 20090218
- Main IPC: H05K7/20
- IPC: H05K7/20 ; F28F7/00
Abstract:
A semiconductor power module includes an insulated substrate with a plurality of power semiconductor devices mounted thereon and a heat sink for radiating heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the insulated substrate is bonded by metallic bonding to another surface of the base of the heat sink opposite the one surface of the base of the heat sink on which the radiation fins are formed.
Public/Granted literature
- US20100208427A1 SEMICONDUCTOR POWER MODULE, INVERTER, AND METHOD OF MANUFACTURING A POWER MODULE Public/Granted day:2010-08-19
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