Invention Grant
- Patent Title: Integrated circuits and methods for forming the same
- Patent Title (中): 集成电路及其形成方法
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Application No.: US12694846Application Date: 2010-01-27
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Publication No.: US08472227B2Publication Date: 2013-06-25
- Inventor: Jhon Jhy Liaw
- Applicant: Jhon Jhy Liaw
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C5/02
- IPC: G11C5/02
Abstract:
An integrated circuit including a first memory array and a logic circuit coupled with the first memory array. All active transistors of all memory cells of the first memory array and all active transistors of the logic circuit are Fin field effect transistors (FinFETs) and have gate electrodes arranged along a direction a first longitudinal direction.
Public/Granted literature
- US20110182098A1 INTEGRATED CIRCUITS AND METHODS FOR FORMING THE SAME Public/Granted day:2011-07-28
Information query
