Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13048291Application Date: 2011-03-15
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Publication No.: US08472235B2Publication Date: 2013-06-25
- Inventor: Munehiro Kozuma , Yoshiyuki Kurokawa
- Applicant: Munehiro Kozuma , Yoshiyuki Kurokawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-070401 20100325
- Main IPC: G11C17/00
- IPC: G11C17/00

Abstract:
An object is reduction in power consumption of a semiconductor device including a memory circuit. In the semiconductor device including a memory circuit, the memory circuit includes a memory cell including a semiconductor element and a memory cell that does not include a semiconductor element in a region defined by a word line and a bit line which intersect with each other. A transistor formed using an oxide semiconductor so as to have extremely low off-state current is used as the semiconductor element, so that the reading precision is improved and thus low voltage operation can be performed. The memory cells store data high or data low. The memory cell comprising a semiconductor element stores minor data of high and low, and the memory cell that does not comprise the semiconductor element stores major data of high and low.
Public/Granted literature
- US20110235389A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-09-29
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