Invention Grant
US08472275B2 Semiconductor memory device changing refresh interval depending on temperature 有权
半导体存储器件根据温度改变刷新间隔

Semiconductor memory device changing refresh interval depending on temperature
Abstract:
A semiconductor memory device includes a memory core circuit having memory cells for storing data, a circuit configured to refresh the memory core circuit at a refresh interval, a temperature detecting unit configured to detect temperature, and a control circuit configured to shorten the refresh interval immediately in response to detection of a predetermined temperature rise by the temperature detecting unit and to elongate the refresh interval after refreshing every one of the memory cells at least once in response to detection of a temperature drop by the temperature detecting unit.
Information query
Patent Agency Ranking
0/0