Invention Grant
- Patent Title: Semiconductor laser silicon waveguide substrate, and integrated device
- Patent Title (中): 半导体激光硅波导基板和集成器件
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Application No.: US13212496Application Date: 2011-08-18
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Publication No.: US08472494B2Publication Date: 2013-06-25
- Inventor: Suguru Akiyama
- Applicant: Suguru Akiyama
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A semiconductor laser includes: a first portion, made from a silicon-containing material, including an optical waveguide, a first diffraction grating including a phase shift, and a second diffraction grating; a second portion including a light-emitting layer made from a material different from that of the first portion; a laser region including the first diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the first diffraction grating; and a mirror region including the second diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the second diffraction grating.
Public/Granted literature
- US20110299561A1 SEMICONDUCTOR LASER SILICON WAVEGUIDE SUBSTRATE, AND INTEGRATED DEVICE Public/Granted day:2011-12-08
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