Invention Grant
- Patent Title: Method for producing a single crystal of semiconductor material
- Patent Title (中): 半导体材料单晶的制造方法
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Application No.: US12539011Application Date: 2009-08-11
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Publication No.: US08475592B2Publication Date: 2013-07-02
- Inventor: Wilfried von Ammon , Ludwig Altmannshofer , Helge Riemann , Joerg Fischer
- Applicant: Wilfried von Ammon , Ludwig Altmannshofer , Helge Riemann , Joerg Fischer
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102008038810 20080813
- Main IPC: C30B11/00
- IPC: C30B11/00 ; C30B9/00 ; C30B17/00 ; C30B21/02 ; C30B28/06 ; C30B35/00

Abstract:
A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.
Public/Granted literature
- US20100037815A1 Method For Producing A Single Crystal Of Semiconductor Material Public/Granted day:2010-02-18
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