Invention Grant
- Patent Title: Method for local etching of the surface of a substrate
- Patent Title (中): 局部蚀刻基片表面的方法
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Application No.: US12811467Application Date: 2008-12-23
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Publication No.: US08475671B2Publication Date: 2013-07-02
- Inventor: Laurent Jalabert
- Applicant: Laurent Jalabert
- Applicant Address: FR Paris
- Assignee: Centre National de la Recherche Scientifique
- Current Assignee: Centre National de la Recherche Scientifique
- Current Assignee Address: FR Paris
- Agency: Alston & Bird LLP
- Priority: FR0800035 20080103
- International Application: PCT/FR2008/001820 WO 20081223
- International Announcement: WO2009/103907 WO 20090827
- Main IPC: C03C15/00
- IPC: C03C15/00 ; C03C25/68 ; C23F1/00

Abstract:
The invention relates to a method for the local etching of the surface of a substrate, characterized in that it comprises: a) making a gas-pervious polymer pad that comprises three-dimensional patterns on one surface thereof; b) contacting the surface including the pad patterns with the substrate; c) submitting the pad/substrate assembly to a plasma so that the species present in the plasma are accelerated and diffused through the pad until they reach the substrate.
Public/Granted literature
- US20110017705A1 Method for Local Etching of the Surface of a Substrate Public/Granted day:2011-01-27
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