Invention Grant
- Patent Title: Method and apparatus for high aspect ratio dielectric etch
- Patent Title (中): 用于高纵横比电介质蚀刻的方法和装置
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Application No.: US12429940Application Date: 2009-04-24
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Publication No.: US08475673B2Publication Date: 2013-07-02
- Inventor: Erik A. Edelberg
- Applicant: Erik A. Edelberg
- Applicant Address: US CA Fremont
- Assignee: Lam Research Company
- Current Assignee: Lam Research Company
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065

Abstract:
An apparatus for etching high aspect ratio features is provided. A plasma processing chamber is provided, comprising a chamber wall forming a plasma processing chamber enclosure, a lower electrode, an upper electrode, a gas inlet, and a gas outlet. A high frequency radio frequency (RF) power source is electrically connected to at least one of the upper electrode or lower electrode. A bias power system is electrically connected to both the upper electrode and the lower electrode, wherein the bias power system is able to provide a bias to the upper and lower electrodes with a magnitude of at least 500 volts, and wherein the bias to the lower electrode is pulsed to intermittently. A gas source is in fluid connection with the gas inlet. A controller is controllably connected to the gas source, the high frequency RF power source, and the bias power system.
Public/Granted literature
- US20100273332A1 METHOD AND APPARATUS FOR HIGH ASPECT RATIO DIELECTRIC ETCH Public/Granted day:2010-10-28
Information query
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