An etchant gas and a method for removing at least a portion of a late transition metal structure. The etchant gas includes PF3 and at least one oxidizing agent, such as at least one of oxygen, ozone, nitrous oxide, nitric oxide and hydrogen peroxide. The etchant gas provides a method of uniformly removing the late transition metal structure or a portion thereof. Moreover, the etchant gas facilitates removing a late transition metal structure with an increased etch rate and at a decreased etch temperature. A method of removing a late transition metal without removing more reactive materials proximate the late transition metal and exposed to the etchant gas is also disclosed.