Invention Grant
- Patent Title: Methods of making substrate structures having a weakened intermediate layer
- Patent Title (中): 制造具有弱化中间层的衬底结构的方法
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Application No.: US13162230Application Date: 2011-06-16
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Publication No.: US08475693B2Publication Date: 2013-07-02
- Inventor: Michel Bruel , Bernard Aspar , Chrystelle Lagahe-Blanchard
- Applicant: Michel Bruel , Bernard Aspar , Chrystelle Lagahe-Blanchard
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0311450 20030930
- Main IPC: B29C44/34
- IPC: B29C44/34 ; B29C65/00 ; H01L21/30 ; B32B37/00 ; H01L21/46
Abstract:
This invention provides composite semiconductor substrates and methods for fabricating such substrates. The composite structures include a semiconductor substrate, a semiconductor superstrate and an intermediate layer interposed between the substrate and the superstrate that comprises a material that undergoes a structural transformation when subject to a suitable heat treatment. The methods provide such a heat treatment so that the intermediate layer becomes spongy or porous, being filled with numerous micro-bubbles or micro-cavities containing a gaseous phase. The composite semiconductor substrates with structurally-transformed intermediate layers have numerous applications.
Public/Granted literature
- US20110250416A1 METHODS OF MAKING SUBSTRATE STRUCTURES HAVING A WEAKENED INTERMEDIATE LAYER Public/Granted day:2011-10-13
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