Invention Grant
- Patent Title: Silicon carbide based porous material and method for preparation thereof
- Patent Title (中): 碳化硅基多孔材料及其制备方法
-
Application No.: US12325080Application Date: 2008-11-28
-
Publication No.: US08475906B2Publication Date: 2013-07-02
- Inventor: Takahiro Tomita , Kenji Morimoto
- Applicant: Takahiro Tomita , Kenji Morimoto
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-309967 20071130; JP2008-300742 20081126
- Main IPC: C04B35/00
- IPC: C04B35/00
Abstract:
A silicon carbide based porous material, which contains a metal silicide in an amount of 1 to 30% by mass and having a porosity of 38 to 80%, is provided.
Public/Granted literature
- US20090176043A1 SILICON CARBIDE BASED POROUS MATERIAL AND METHOD FOR PREPARATION THEREOF Public/Granted day:2009-07-09
Information query
