Invention Grant
- Patent Title: Silicon carbide-based porous body
- Patent Title (中): 碳化硅基多孔体
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Application No.: US12329846Application Date: 2008-12-08
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Publication No.: US08475907B2Publication Date: 2013-07-02
- Inventor: Masaaki Kawai
- Applicant: Masaaki Kawai
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-322438 20071213
- Main IPC: C04B35/56
- IPC: C04B35/56

Abstract:
There is provided a silicon carbide-based porous body which can avoid excessive temperature elevation when it is used as a filter and the captured particulate matter (PM) is burnt for removal and which is low in strength reduction caused by heat cycle. The silicon carbide-based porous body comprises a plurality of silicon carbide (SiC) particles as an aggregate and a plurality of binding phases which bind the silicon carbide particles to each other, wherein of the binding phases, the phase having the largest volume is either of a Si phase and a phase (a metal silicide phase) made of at least one member selected from the group consisting of a Ti silicide, a Zr silicide, a Mo silicide and a W silicide, all having a linear thermal expansion coefficient at 40 to 800° C., higher than that of Si by at least 3×10−6 (° C.−1) and the phase having the next largest volume is the remainder of the Si phase and the metal silicide phase, and the binding phases contain the Si phase by 20 to 80% by volume of the total binding phases.
Public/Granted literature
- US20090155528A1 SILICON CARBIDE-BASED POROUS BODY Public/Granted day:2009-06-18
Information query
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