Invention Grant
US08475978B2 Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film
有权
光掩模坯料和制造方法，光掩模，光图案曝光方法以及过渡金属/硅基材料薄膜的设计方法
- Patent Title: Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film
- Patent Title (中): 光掩模坯料和制造方法，光掩模，光图案曝光方法以及过渡金属/硅基材料薄膜的设计方法
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Application No.: US13228501Application Date: 2011-09-09
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Publication No.: US08475978B2Publication Date: 2013-07-02
- Inventor: Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
- Applicant: Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.,Toppan Printing Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.,Toppan Printing Co., Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2010-203252 20100910
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/24
Abstract:
A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
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