Invention Grant
- Patent Title: Methods of forming patterned masks
- Patent Title (中): 形成图案化掩模的方法
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Application No.: US13609027Application Date: 2012-09-10
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Publication No.: US08476002B2Publication Date: 2013-07-02
- Inventor: Zishu Zhang , Anton J. deVilliers , Robert Carr , Farrell Good
- Applicant: Zishu Zhang , Anton J. deVilliers , Robert Carr , Farrell Good
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.
Public/Granted literature
- US20130004889A1 Methods of Forming Patterned Masks Public/Granted day:2013-01-03
Information query
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