Invention Grant
- Patent Title: Light emitting diode having improved light emission efficiency and method for fabricating the same
- Patent Title (中): 发光效率提高的发光二极管及其制造方法
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Application No.: US12911070Application Date: 2010-10-25
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Publication No.: US08476088B2Publication Date: 2013-07-02
- Inventor: In Hwan Lee , Lee Woon Jang , Jin Woo Ju , Jung Hun Choi , Jae Woo Park
- Applicant: In Hwan Lee , Lee Woon Jang , Jin Woo Ju , Jung Hun Choi , Jae Woo Park
- Applicant Address: KR Chonbuk
- Assignee: Industrial Cooperation Foundation Chonbuk National University
- Current Assignee: Industrial Cooperation Foundation Chonbuk National University
- Current Assignee Address: KR Chonbuk
- Agency: McClure, Qualey & Rodack, LLP
- Priority: KR10-2010-0009468 20100202
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
Provided is a light emitting diode (LED) having improved light emission efficiency, which can effectively overcome a technical limit of the related art by implementing a surface plasma resonance effect as well as reducing a layer defect such as threading dislocations in an LED structure.
Public/Granted literature
- US20110186863A1 Light Emitting Diode Having Improved Light Emission Efficiency and Method for Fabricating the Same Public/Granted day:2011-08-04
Information query
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