A method of making a support structure is provided. The method includes depositing a photoresist layer on a substrate of the support structure and patterning the photoresist layer. The method further includes etching the patterned photoresist layer. Etching the patterned photoresist includes forming a first group of through silicon vias (TSVs) configured to electrically connect a first surface of the substrate to a first electrical interface adjacent an opposite second surface of the substrate. Etching the patterned photoresist further includes forming a second group of TSVs configured to conduct thermal energy from the first surface of the substrate to a thermal interface adjacent the second surface of the substrate. A difference in cross-sectional area between TSVs in the first group of TSVs and TSVs in the second group of TSVs is less than 10%, and the first electrical interface is separated from the thermal interface.