Invention Grant
- Patent Title: Method and a structure for enhancing electrical insulation and dynamic performance of MIS structures comprising vertical field plates
- Patent Title (中): 包括垂直场板的MIS结构的电绝缘和动态性能的方法和结构
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Application No.: US13324896Application Date: 2011-12-13
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Publication No.: US08476136B2Publication Date: 2013-07-02
- Inventor: Anna Borzi , Corrado Coccorese , Giuseppe Morale , Domenico Repici
- Applicant: Anna Borzi , Corrado Coccorese , Giuseppe Morale , Domenico Repici
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/78
Abstract:
In an MIS structure a field plate electrode is incorporated below a buried gate electrode by using an insulating oxide layer, which is formed concurrently with the gate dielectric layer. In order to obtain superior dynamic behavior and enhanced dielectric strength the oxidation behavior of the field plate electrode is modified, for instance by incorporating a desired high concentration of arsenic.
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