Invention Grant
- Patent Title: SOI substrate and manufacturing method thereof
- Patent Title (中): SOI衬底及其制造方法
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Application No.: US13017740Application Date: 2011-01-31
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Publication No.: US08476147B2Publication Date: 2013-07-02
- Inventor: Naoki Okuno , Hajime Tokunaga
- Applicant: Naoki Okuno , Hajime Tokunaga
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2010-021857 20100203
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/02
Abstract:
A bond substrate is irradiated with ions, so that an embrittlement layer is formed, then, the bond substrate is bonded to a base substrate. Next, a part of a region of the bonded bond substrate is heated at a temperature higher than a temperature of the other part of the region of the bond substrate, or alternatively, a first heat treatment is performed on the bonded bond substrate as a whole at a first temperature; and a second heat treatment is performed on a part of a region of the bonded bond substrate at a second temperature higher than the first temperature, so that separation of the bond substrate proceeds from the part of the region of the bond substrate to the other part of the region of the bond substrate in the embrittlement layer. Accordingly, a semiconductor layer is formed over the base substrate.
Public/Granted literature
- US20110186958A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-08-04
Information query
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