Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture

Invention Grant

US08476158B2 Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture 有权

Title translation: 制备和存储GaN衬底，制备和存储的GaN衬底的方法以及半导体器件及其制造方法

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Patent Title: Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture
Patent Title (中): 制备和存储GaN衬底，制备和存储的GaN衬底的方法以及半导体器件及其制造方法
Application No.: US13188475

Application Date: 2011-07-22
Publication No.: US08476158B2

Publication Date: 2013-07-02
Inventor: Hideyuki Ijiri , Seiji Nakahata
Applicant: Hideyuki Ijiri , Seiji Nakahata
Applicant Address: JP Osaka
Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee Address: JP Osaka
Agent James W. Judge
Priority: JP2006-164832 20060614
Main IPC: H01L21/28
IPC: H01L21/28 ; H01L21/3205

Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture

Abstract:

A GaN substrate storage method of storing, within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, a GaN substrate (1) having a planar first principal face (1m), and whose plane orientation in an arbitrary point (P) along the first principal face (1m) and separated 3 mm or more from the outer edge thereof has an off-inclination angle Δα of −10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1a) that is inclined 50° or more, 90° or less with respect to a plane (1c), being either the (0001) plane or the (000 1) plane, through the arbitrary point. In this way a method of storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1), with which semiconductor devices of favorable properties can be manufactured is made available.

Abstract(Chinese):

一种GaN衬底存储方法，其在氧浓度不大于15体积％的气氛中，％，水蒸气浓度不大于20g / m 3，具有平面第一主面（1μm）的GaN衬底（1），并且其沿着第一主面（1m）的任意点（P）的面取向）并且从其外边缘分离出3mm以上的角度具有相对于倾斜50°的任意指定的晶面（1a）的平面取向为-10°以上，10°以下的偏斜角度Δα 或更多，90°或更小，相对于（0001）面或（0001）面的平面（1c），通过该任意点。以这种方式，可以获得存储其主面平面取向不同于（0001）或（000 1）的GaN衬底的方法，可以制造具有良好特性的半导体器件。

Public/Granted literature

US20110278588A1 Method of Preparing and Storing GaN Substrate, Prepared and Stored GaN Substrate, and Semiconductor Device and Method of Its Manufacture Public/Granted day:2011-11-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/28	....用H01L21/20至H01L21/268各组不包含的方法或设备在半导体材料上制造电极的