Invention Grant
- Patent Title: Non-conformal hardmask deposition for through silicon etch
- Patent Title (中): 用于通过硅蚀刻的非保形硬掩模沉积
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Application No.: US13014114Application Date: 2011-01-26
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Publication No.: US08476168B2Publication Date: 2013-07-02
- Inventor: Troy L. Graves-Abe , Mukta G Farooq
- Applicant: Troy L. Graves-Abe , Mukta G Farooq
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Katherine S. Brown
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
The present invention provides a method to form deep features in a stacked semiconductor structure. Deposition of a non-conformal hardmask onto a patterned topography can form a hardmask to protect all but recessed areas with minimal integration steps. The invention enables etching deep features, even through multiple BEOL layers, without multiple additional process steps.
Public/Granted literature
- US20120190204A1 NON-CONFORMAL HARDMASK DEPOSITION FOR THROUGH SILICON ETCH Public/Granted day:2012-07-26
Information query
IPC分类:
