Invention Grant
US08476170B2 Method of forming pattern, method of manufacturing semiconductor device, and method of manufacturing template
有权
形成图案的方法，制造半导体器件的方法以及制造模板的方法
- Patent Title: Method of forming pattern, method of manufacturing semiconductor device, and method of manufacturing template
- Patent Title (中): 形成图案的方法，制造半导体器件的方法以及制造模板的方法
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Application No.: US13233770Application Date: 2011-09-15
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Publication No.: US08476170B2Publication Date: 2013-07-02
- Inventor: Tomoko Ojima
- Applicant: Tomoko Ojima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2010-275279 20101210
- Main IPC: H01L21/24
- IPC: H01L21/24
Abstract:
According to one embodiment, a pattern formation method includes, before forming a circuit pattern on a substrate using imprinting, a wall pattern with a predetermined height is formed to surround the periphery of an area serving as imprint shots on the substrate in each imprint shot and to allow the imprint shots to be separated from one another. The circuit pattern is formed in the imprint shots surrounded by the wall pattern through imprinting.
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Information query
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