Invention Grant
- Patent Title: Grain boundary-insulated semiconductor ceramic, semiconductor ceramic capacitor, and method for producing semiconductor ceramic capacitor
- Patent Title (中): 晶界绝缘半导体陶瓷,半导体陶瓷电容器及半导体陶瓷电容器的制造方法
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Application No.: US13358732Application Date: 2012-01-26
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Publication No.: US08476179B2Publication Date: 2013-07-02
- Inventor: Tsutomu Tatekawa
- Applicant: Tsutomu Tatekawa
- Applicant Address: JP Nagaokakyo-Shi, Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo-Shi, Kyoto-fu
- Agency: Dickstein Shapiro LLP
- Priority: JP2011-038259 20110224
- Main IPC: C04B35/47
- IPC: C04B35/47

Abstract:
A grain boundary-insulated semiconductor ceramic contains a SrTiO3-based compound as a main component, and a diffusing agent containing a grain boundary insulating agent and a glass component. The grain boundary insulating agent is composed of a material free of lead, the glass component mainly contains a SiO2—X2O-MO—TiO2-based glass material that does not contain boron or lead and in which X represents an alkali metal, and M represents at least one of barium, strontium, and calcium, and the content of the glass component is 3 to 15 parts by weight relative to 100 parts by weight of the grain boundary insulating agent. A component base is composed of the grain boundary-insulated semiconductor ceramic.
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