Invention Grant
US08476179B2 Grain boundary-insulated semiconductor ceramic, semiconductor ceramic capacitor, and method for producing semiconductor ceramic capacitor 有权
晶界绝缘半导体陶瓷,半导体陶瓷电容器及半导体陶瓷电容器的制造方法

  • Patent Title: Grain boundary-insulated semiconductor ceramic, semiconductor ceramic capacitor, and method for producing semiconductor ceramic capacitor
  • Patent Title (中): 晶界绝缘半导体陶瓷,半导体陶瓷电容器及半导体陶瓷电容器的制造方法
  • Application No.: US13358732
    Application Date: 2012-01-26
  • Publication No.: US08476179B2
    Publication Date: 2013-07-02
  • Inventor: Tsutomu Tatekawa
  • Applicant: Tsutomu Tatekawa
  • Applicant Address: JP Nagaokakyo-Shi, Kyoto-fu
  • Assignee: Murata Manufacturing Co., Ltd.
  • Current Assignee: Murata Manufacturing Co., Ltd.
  • Current Assignee Address: JP Nagaokakyo-Shi, Kyoto-fu
  • Agency: Dickstein Shapiro LLP
  • Priority: JP2011-038259 20110224
  • Main IPC: C04B35/47
  • IPC: C04B35/47
Grain boundary-insulated semiconductor ceramic, semiconductor ceramic capacitor, and method for producing semiconductor ceramic capacitor
Abstract:
A grain boundary-insulated semiconductor ceramic contains a SrTiO3-based compound as a main component, and a diffusing agent containing a grain boundary insulating agent and a glass component. The grain boundary insulating agent is composed of a material free of lead, the glass component mainly contains a SiO2—X2O-MO—TiO2-based glass material that does not contain boron or lead and in which X represents an alkali metal, and M represents at least one of barium, strontium, and calcium, and the content of the glass component is 3 to 15 parts by weight relative to 100 parts by weight of the grain boundary insulating agent. A component base is composed of the grain boundary-insulated semiconductor ceramic.
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