Invention Grant
- Patent Title: Reproducible resistance variable insulating memory devices and methods for forming same
- Patent Title (中): 可再生电阻可变绝缘存储器件及其形成方法
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Application No.: US13248214Application Date: 2011-09-29
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Publication No.: US08476613B2Publication Date: 2013-07-02
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at the tip of the bottom electrode is thinnest, creating the largest electric field at the tip of the bottom electrode. The arrangement of electrodes and the structure of the memory element makes it possible to create conduction paths with stable, consistent and reproducible switching and memory properties in the memory device.
Public/Granted literature
- US20120018694A1 REPRODUCIBLE RESISTANCE VARIABLE INSULATING MEMORY DEVICES AND METHODS FOR FORMING SAME Public/Granted day:2012-01-26
Information query
IPC分类:
