Invention Grant
US08476616B2 Materials for electronic and optoelectronic devices having enhanced charge transfer
有权
具有增强的电荷转移的电子和光电器件的材料
- Patent Title: Materials for electronic and optoelectronic devices having enhanced charge transfer
- Patent Title (中): 具有增强的电荷转移的电子和光电器件的材料
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Application No.: US13235134Application Date: 2011-09-16
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Publication No.: US08476616B2Publication Date: 2013-07-02
- Inventor: Edward Hartley Sargent , Ghada Koleilat , Larissa Levina
- Applicant: Edward Hartley Sargent , Ghada Koleilat , Larissa Levina
- Applicant Address: US CA Menlo Park
- Assignee: InVisage Technologies, Inc.
- Current Assignee: InVisage Technologies, Inc.
- Current Assignee Address: US CA Menlo Park
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
Public/Granted literature
- US20120205624A1 PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS Public/Granted day:2012-08-16
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