Invention Grant
US08476617B2 Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle
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含有石墨烯的半导体结构和在具有限定的杂散角的碳化硅衬底上的器件
- Patent Title: Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle
- Patent Title (中): 含有石墨烯的半导体结构和在具有限定的杂散角的碳化硅衬底上的器件
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Application No.: US13030834Application Date: 2011-02-18
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Publication No.: US08476617B2Publication Date: 2013-07-02
- Inventor: Christos D. Dimitrakopoulos , Alfred Grill , Timothy J. McArdle , John A. Ott , Robert L. Wisnierff
- Applicant: Christos D. Dimitrakopoulos , Alfred Grill , Timothy J. McArdle , John A. Ott , Robert L. Wisnierff
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/20
Abstract:
A semiconductor structure having a high Hall mobility is provided that includes a SiC substrate having a miscut angle of 0.1° or less and a graphene layer located on an upper surface of the SiC substrate. Also, provided are semiconductor devices that include a SiC substrate having a miscut angle of 0.1° or less and at least one graphene-containing semiconductor device located atop the SiC substrate. The at least one graphene-containing semiconductor device includes a graphene layer overlying and in contact with an upper surface of the SiC substrate.
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