Invention Grant
US08476625B2 Semiconductor device comprising gate electrode of one conductive layer and gate wiring of two conductive layers
有权
半导体器件包括一个导电层的栅电极和两个导电层的栅极布线
- Patent Title: Semiconductor device comprising gate electrode of one conductive layer and gate wiring of two conductive layers
- Patent Title (中): 半导体器件包括一个导电层的栅电极和两个导电层的栅极布线
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Application No.: US12629219Application Date: 2009-12-02
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Publication No.: US08476625B2Publication Date: 2013-07-02
- Inventor: Hajime Kimura
- Applicant: Hajime Kimura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2008-311146 20081205
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12

Abstract:
A semiconductor device includes an oxide semiconductor layer provided over a substrate having an insulating surface; a gate insulating film covering the oxide semiconductor layer; a first conductive layer and a second conductive layer laminated in this order over the gate insulating film; an insulating film covering the oxide semiconductor layer and a gate wiring including a gate electrode (the first and second conductive layers); and a third conductive layer and a fourth conductive layer laminated in this order over the insulating film and electrically connected to the oxide semiconductor layer. The gate electrode is formed using the first conductive layer. The gate wiring is formed using the first conductive layer and the second conductive layer. A source electrode is formed using the third conductive layer. A source wiring is formed using the third conductive layer and the fourth conductive layer.
Public/Granted literature
- US20100140613A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-06-10
Information query
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