Invention Grant
- Patent Title: Trench poly ESD formation for trench MOS and SGT
- Patent Title (中): 沟槽MOS和SGT的沟槽聚合物ESD形成
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Application No.: US13010427Application Date: 2011-01-20
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Publication No.: US08476676B2Publication Date: 2013-07-02
- Inventor: Hong Chang , John Chen
- Applicant: Hong Chang , John Chen
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A semiconductor device and its method of fabrication are described. A trench formed in a semiconductor substrate is partially filling said trench with a semiconductor material that lines a bottom and sides of the trench, leaving a gap in a middle of the trench running lengthwise along the trench. A first portion of the semiconductor material located below the gap is doped with dopants of a first conductivity type. The gap is filled with a dielectric material. Second portions of the semiconductor material located on the sides of the trench on both sides of the dielectric material are doped with dopants of a second conductivity type. The doping forms a P-N-P or N-P-N structure running lengthwise along the trench with differently doped regions located side by side across a width of the trench.
Public/Granted literature
- US20120187472A1 TRENCH POLY ESD FORMATION FOR TRENCH MOS AND SGT Public/Granted day:2012-07-26
Information query
IPC分类:
