Memory device and method for making same

Invention Grant

US08476686B2 Memory device and method for making same 有权

Title translation: 存储器件及其制作方法

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Patent Title: Memory device and method for making same
Patent Title (中): 存储器件及其制作方法
Application No.: US12169648

Application Date: 2008-07-09
Publication No.: US08476686B2

Publication Date: 2013-07-02
Inventor: Armin Tilke
Applicant: Armin Tilke
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Infineon Techn. AG
Agent Philip Schlazer
Main IPC: H01L27/24
IPC: H01L27/24

Memory device and method for making same

Abstract:

An embodiment relates to a memory cell comprising a programmable resistance memory element electrically coupled to a heterojunction bipolar transistor.

Abstract(Chinese):

一个实施例涉及一种包含电耦合到异质结双极晶体管的可编程电阻存储元件的存储单元。

Public/Granted literature

US20100008122A1 Memory Device And Method For Making Same Public/Granted day:2010-01-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L27/00	由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件（其零部件入H01L23/00，H01L29/00至H01L51/00；由多个单个固态器件组成的组装件入H01L25/00）
H01L27/24	.包括无电位跃变势垒或表面势垒的用于整流、放大，或切换的固态组件的