In one embodiment, a nonvolatile semiconductor memory includes a memory cell array, a first silicon nitride film and a second silicon nitride film. The memory cell array includes NAND cell units. Each of the NAND cell units has memory cell transistors, a source-side select gate transistor and a drain-side select gate transistor. The source-side select gate transistors is disposed in such a manner as to face each other and the drain-side select gate transistors is disposed in such a manner as to face each other. The first silicon nitride film is present in a region between the source-side select gate transistors and is disposed at a position lowest from the upper surface of the semiconductor substrate. The second silicon nitride film is formed in a region between the drain-side select gate transistors and is disposed at a position lowest from the upper surface of the semiconductor substrate.