Invention Grant
US08476694B2 Memory cell, memory device and method for manufacturing memory cell
有权
存储单元，存储器件和用于制造存储单元的方法
- Patent Title: Memory cell, memory device and method for manufacturing memory cell
- Patent Title (中): 存储单元，存储器件和用于制造存储单元的方法
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Application No.: US12877284Application Date: 2010-09-08
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Publication No.: US08476694B2Publication Date: 2013-07-02
- Inventor: Po-Chou Chen , Yao-Wen Chang , I-Chen Yang
- Applicant: Po-Chou Chen , Yao-Wen Chang , I-Chen Yang
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd
- Current Assignee: MACRONIX International Co., Ltd
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A memory cell including a substrate, a stacked gate structure and a first isolation structure is provided. The substrate has a first doped region, a second doped and a channel region located between the first doped region and the second doped region. The stacked gate structure is disposed on the channel and at least includes a charge trapping layer and a gate from bottom to top. The first isolation structure is disposed in the substrate and is connected to the first doped region and extends downwards from the first doped region for a predetermined length, and a bottom of the first isolation structure is lower than a bottom of the first doped region.
Public/Granted literature
- US20120056259A1 MEMORY CELL, MEMORY DEVICE AND METHOD FOR MANUFACTURING MEMORY CELL Public/Granted day:2012-03-08
Information query
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