Invention Grant
US08476708B2 Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration
有权
具有形成在具有不同锗浓度的单晶半导体层上的电路的半导体存储器件
- Patent Title: Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration
- Patent Title (中): 具有形成在具有不同锗浓度的单晶半导体层上的电路的半导体存储器件
-
Application No.: US13346888Application Date: 2012-01-10
-
Publication No.: US08476708B2Publication Date: 2013-07-02
- Inventor: Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Kiyotaka Miyano , Shinji Mori , Ichiro Mizushima
- Applicant: Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Kiyotaka Miyano , Shinji Mori , Ichiro Mizushima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-004954 20110113
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/792
Abstract:
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion.The circuit portion is formed on the semiconductor layer. The Ge concentration in the lower portion of the semiconductor layer is higher than that in the upper portion of the semiconductor layer.
Public/Granted literature
- US20120181602A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-07-19
Information query
IPC分类:
