Invention Grant
US08476712B2 Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode
有权
具有软恢复特性的耐浪涌电流半导体二极管及制造半导体二极管的方法
- Patent Title: Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode
- Patent Title (中): 具有软恢复特性的耐浪涌电流半导体二极管及制造半导体二极管的方法
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Application No.: US12894239Application Date: 2010-09-30
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Publication No.: US08476712B2Publication Date: 2013-07-02
- Inventor: Roman Baburske , Josef Lutz , Ralf Siemieniec , Hans-Joachim Schulze
- Applicant: Roman Baburske , Josef Lutz , Ralf Siemieniec , Hans-Joachim Schulze
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.
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