Invention Grant
- Patent Title: High density photodiodes
- Patent Title (中): 高密度光电二极管
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Application No.: US13110765Application Date: 2011-05-18
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Publication No.: US08476725B2Publication Date: 2013-07-02
- Inventor: Peter Steven Bui , Narayan Dass Taneja
- Applicant: Peter Steven Bui , Narayan Dass Taneja
- Applicant Address: US CA Hawthorne
- Assignee: OSI Optoelectronics, Inc.
- Current Assignee: OSI Optoelectronics, Inc.
- Current Assignee Address: US CA Hawthorne
- Agency: Novel IP
- Main IPC: H01L31/0216
- IPC: H01L31/0216

Abstract:
The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.
Public/Granted literature
- US20110278690A1 High Density Photodiodes Public/Granted day:2011-11-17
Information query
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