Invention Grant
- Patent Title: Nitride semiconductor diode
- Patent Title (中): 氮化物半导体二极管
-
Application No.: US13349959Application Date: 2012-01-13
-
Publication No.: US08476731B2Publication Date: 2013-07-02
- Inventor: Akihisa Terano , Kazuhiro Mochizuki , Takashi Ishigaki
- Applicant: Akihisa Terano , Kazuhiro Mochizuki , Takashi Ishigaki
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-047107 20110304
- Main IPC: H01L29/47
- IPC: H01L29/47 ; H01L29/40
Abstract:
In a Schottky electrode formation region on a nitride semiconductor, the total length of junctions of Schottky electrodes and a surface of a nitride semiconductor layer is longer than the perimeter of the Schottky electrode formation region. The total length is preferably 10 times longer than the perimeter. For example, the Schottky electrodes are formed concentrically and circularly.
Public/Granted literature
- US20120223337A1 NITRIDE SEMICONDUCTOR DIODE Public/Granted day:2012-09-06
Information query
IPC分类:
