This specification discloses a semiconductor device having higher electric strength.The semiconductor device disclosed in this specification has a semiconductor element region, a peripheral termination region, a peripheral electrode, an insulating film, and an intermediate electrode. A semiconductor element is formed within the semiconductor element region. The peripheral termination region is formed around the semiconductor element region and formed of a single conductive type semiconductor. The semiconductor element region and the peripheral termination region are exposed at one surface of a semiconductor substrate. The peripheral electrode is formed on a surface of the peripheral termination region and along a circumference of the semiconductor substrate. The insulating film is formed on the surface of the peripheral termination region and between the semiconductor element region and the peripheral electrode. The intermediate electrode is formed on the insulating film. A thickness of the insulating film under the intermediate electrode is larger at a side of the peripheral electrode than at a side of the semiconductor element region.