Invention Grant
US08476740B2 Sheet for protecting surface of semiconductor wafer, semiconductor device manufacturing method and semiconductor wafer protection method using sheet
有权
用于保护半导体晶片表面的片，半导体器件制造方法和使用片的半导体晶片保护方法
- Patent Title: Sheet for protecting surface of semiconductor wafer, semiconductor device manufacturing method and semiconductor wafer protection method using sheet
- Patent Title (中): 用于保护半导体晶片表面的片，半导体器件制造方法和使用片的半导体晶片保护方法
-
Application No.: US13520110Application Date: 2011-05-31
-
Publication No.: US08476740B2Publication Date: 2013-07-02
- Inventor: Eiji Hayashishita , Yoshihisa Saimoto , Makoto Kataoka , Katsutoshi Ozaki , Mitsuru Sakai
- Applicant: Eiji Hayashishita , Yoshihisa Saimoto , Makoto Kataoka , Katsutoshi Ozaki , Mitsuru Sakai
- Applicant Address: JP Minato-Ku, Tokyo
- Assignee: Mitsui Chemicals Tohcello, Inc.
- Current Assignee: Mitsui Chemicals Tohcello, Inc.
- Current Assignee Address: JP Minato-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2010-127076 20100602
- International Application: PCT/JP2011/003063 WO 20110531
- International Announcement: WO2011/152045 WO 20111208
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/30 ; H01L21/46 ; H01L21/00 ; B32B9/00 ; B32B33/00
Abstract:
To provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25° C., E(25), of 1 GPa or more; a resin layer A that satisfies the condition EA(60)/EA(25)
Public/Granted literature
Information query
IPC分类:
