Invention Grant
- Patent Title: C-rich carbon boron nitride dielectric films for use in electronic devices
- Patent Title (中): 用于电子器件的富C碳氮化硼绝缘膜
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Application No.: US13228857Application Date: 2011-09-09
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Publication No.: US08476743B2Publication Date: 2013-07-02
- Inventor: Son Van Nguyen , Alfred Grill , Thomas J. Haigh, Jr. , Sanjay Mehta
- Applicant: Son Van Nguyen , Alfred Grill , Thomas J. Haigh, Jr. , Sanjay Mehta
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/31 ; C23C8/54 ; B05D5/12
Abstract:
A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
Public/Granted literature
- US20130062753A1 C-RICH CARBON BORON NITRIDE DIELECTRIC FILMS FOR USE IN ELECTRONIC DEVICES Public/Granted day:2013-03-14
Information query
IPC分类:
