Invention Grant
- Patent Title: Airgap-containing interconnect structure with patternable low-k material and method of fabricating
- Patent Title (中): 具有可图案化低k材料的含气隙互连结构和制造方法
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Application No.: US11971470Application Date: 2008-01-09
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Publication No.: US08476758B2Publication Date: 2013-07-02
- Inventor: Qinghuang Lin
- Applicant: Qinghuang Lin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
The present invention provides a method of fabricating an airgap-containing interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene airgap-containing low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating.
Public/Granted literature
- US20090174067A1 AIRGAP-CONTAINING INTERCONNECT STRUCTURE WITH PATTERNABLE LOW-K MATERIAL AND METHOD OF FABRICATING Public/Granted day:2009-07-09
Information query
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