Invention Grant
- Patent Title: Through-silicon vias and methods for forming the same
- Patent Title (中): 硅通孔及其形成方法
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Application No.: US11874009Application Date: 2007-10-17
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Publication No.: US08476769B2Publication Date: 2013-07-02
- Inventor: Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Kuo-Ching “Steven” Hsu , Kai-Ming Ching
- Applicant: Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Kuo-Ching “Steven” Hsu , Kai-Ming Ching
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/01
- IPC: H01L29/01
Abstract:
An integrated circuit structure and methods for forming the same are provided. The integrated circuit structure includes a substrate; a through-silicon via (TSV) extending into the substrate; a TSV pad spaced apart from the TSV; and a metal line over, and electrically connecting, the TSV and the TSV pad.
Public/Granted literature
- US20090102021A1 Through-Silicon Vias and Methods for Forming the Same Public/Granted day:2009-04-23
Information query
