Invention Grant
- Patent Title: Apparatus and methods for forming through vias
- Patent Title (中): 用于形成通孔的装置和方法
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Application No.: US13178345Application Date: 2011-07-07
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Publication No.: US08476770B2Publication Date: 2013-07-02
- Inventor: Tung-Liang Shao , Chih-Hang Tung , Chen-Hua Yu , Hao-Yi Tsai , Mirng-Ji Lii , Da-Yuan Shih
- Applicant: Tung-Liang Shao , Chih-Hang Tung , Chen-Hua Yu , Hao-Yi Tsai , Mirng-Ji Lii , Da-Yuan Shih
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Methods and apparatus for forming through vias in an integrated circuit package are disclosed. An apparatus is disclosed, having a substrate having one or more bond pad terminals for receiving electrical connections on at least one surface; an encapsulation layer covering the at least one surface of the substrate and having a first thickness; a plurality of through vias extending through the encapsulation layer and positioned in correspondence with at least one of the one or more bond pad terminals; conductor material disposed within the plurality of through vias to form electrical connectors within the plurality of through vias; and at least one external terminal disposed on a surface of the encapsulation layer, electrically coupled to one of the one or more bond pad terminals by an electrical connector in at least one of the plurality of through vias. Package arrangements and methods for the through vias are disclosed.
Public/Granted literature
- US20130009319A1 Apparatus and Methods for Forming Through Vias Public/Granted day:2013-01-10
Information query
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