Invention Grant
US08476819B2 Triode-structured field emission display with anode and gate on the same substrate
有权
具有阳极和栅极的三极结构场发射显示器在同一衬底上
- Patent Title: Triode-structured field emission display with anode and gate on the same substrate
- Patent Title (中): 具有阳极和栅极的三极结构场发射显示器在同一衬底上
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Application No.: US13511698Application Date: 2011-08-12
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Publication No.: US08476819B2Publication Date: 2013-07-02
- Inventor: Tailiang Guo , Yongai Zhang , Zhixian Lin , Liqin Hu , Yun Ye , Yuxiang You
- Applicant: Tailiang Guo , Yongai Zhang , Zhixian Lin , Liqin Hu , Yun Ye , Yuxiang You
- Priority: CN201110003471 20110110
- International Application: PCT/CN2011/078370 WO 20110812
- International Announcement: WO2012/094889 WO 20120719
- Main IPC: H01J29/32
- IPC: H01J29/32 ; H01J29/08

Abstract:
The present invention relates to a triode field emission display with anode and gate on the same substrate, comprising anode-gate substrate and cathode substrate, parallel and adapted in the size; a number of strip-like cathode conducting layers arranged alternating on the cathode substrate; resistor layer for current limiting and dielectric layer for cathode protection are arranged alternately on the cathode conducting layer in the longitudinal direction; the electron emission materials are arranged on the resistor layer for current limiting; wherein the strip-like anode conducting layer and strip-like gate conducting layer on the anode-gate substrate are perpendicular to the strip-like cathode conducting layer on the cathode substrate, dielectric layer for isolation is arranged between the anode-gate and the cathode substrates, one end of the dielectric layer for isolation is connected to the dielectric layer for gate protection, the other end is connected to the dielectric layer for cathode protection.
Public/Granted literature
- US20130026906A1 Triode-structured field emission display with anode and gate on the same substrate Public/Granted day:2013-01-31
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