Invention Grant
- Patent Title: Semiconductor switch
- Patent Title (中): 半导体开关
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Application No.: US13234010Application Date: 2011-09-15
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Publication No.: US08476956B2Publication Date: 2013-07-02
- Inventor: Takayuki Teraguchi
- Applicant: Takayuki Teraguchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2010-260804 20101124
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
According to one embodiment, a semiconductor switch includes a power supply section, a driver, and a switch section. The power supply section is configured to generate a first potential higher than a positive power supply potential, and a negative second potential. The driver is connected to the power supply section and configured to output a control signal. A potential of the control signal is set to the first potential at high level and set to the second potential at low level according to a terminal switching signal. The switch section is configured to receive the control signal and switch a connection between terminals. The driver has a first level shifter, a second level shifter and a first circuit. The first level shifter has a first high-side switch and a first low-side switch. The second level shifter has a second high-side switch and a second low-side switch.
Public/Granted literature
- US20120126875A1 SEMICONDUCTOR SWITCH Public/Granted day:2012-05-24
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