Invention Grant
US08476961B2 System and method of transistor switch biasing in a high power semiconductor switch
有权
大功率半导体开关中晶体管开关偏置的系统和方法
- Patent Title: System and method of transistor switch biasing in a high power semiconductor switch
- Patent Title (中): 大功率半导体开关中晶体管开关偏置的系统和方法
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Application No.: US13345423Application Date: 2012-01-06
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Publication No.: US08476961B2Publication Date: 2013-07-02
- Inventor: Chun-Wen Paul Huang , Mark Doherty , Philip Michael Antognetti
- Applicant: Chun-Wen Paul Huang , Mark Doherty , Philip Michael Antognetti
- Applicant Address: CA
- Assignee: SiGe Semiconductor, Inc.
- Current Assignee: SiGe Semiconductor, Inc.
- Current Assignee Address: CA
- Agency: Knobbe Martens Olson & Bear, LLP
- Main IPC: H03K17/687
- IPC: H03K17/687
Abstract:
A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
Public/Granted literature
- US20120202438A1 SYSTEM AND METHOD OF TRANSISTOR SWITCH BIASING IN A HIGH POWER SEMICONDUCTOR SWITCH Public/Granted day:2012-08-09
Information query
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