Invention Grant
US08477312B2 Total reflection illuminated sensor chip, method for producing the total reflection illuminated sensor chip, and sensing method using the total reflection illuminated sensor chip 有权
全反射照明传感器芯片,全反射照射传感器芯片的制造方法以及使用全反射照射传感器芯片的感测方法

  • Patent Title: Total reflection illuminated sensor chip, method for producing the total reflection illuminated sensor chip, and sensing method using the total reflection illuminated sensor chip
  • Patent Title (中): 全反射照明传感器芯片,全反射照射传感器芯片的制造方法以及使用全反射照射传感器芯片的感测方法
  • Application No.: US12721303
    Application Date: 2010-03-10
  • Publication No.: US08477312B2
    Publication Date: 2013-07-02
  • Inventor: Toshihito Kimura
  • Applicant: Toshihito Kimura
  • Applicant Address: JP Tokyo
  • Assignee: FUJIFILM Corporation
  • Current Assignee: FUJIFILM Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Birch, Stewart, Kolasch & Birch, LLP
  • Priority: JP2009-057319 20090311
  • Main IPC: G01N21/55
  • IPC: G01N21/55
Total reflection illuminated sensor chip, method for producing the total reflection illuminated sensor chip, and sensing method using the total reflection illuminated sensor chip
Abstract:
A total reflection illuminated sensor chip is employed in a detecting method for detecting a detection target substance including the steps of: supplying a sample that includes the detection target substance onto a metal film formed on a surface of a dielectric prism, irradiating a measuring light beam onto the interface between the dielectric prism and the metal film such that conditions for total reflection are satisfied at the interface, and utilizing evanescent waves which are generated due to the irradiation of the measuring light beam to detect the detection target substance. Polishing streaks in the region of a metal film formation surface of the dielectric film, on which the metal film is formed, have directional properties with respect to a single direction.
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