Invention Grant
US08477462B2 CPP device with improved current confining structure and process
有权
CPP器件具有改进的电流限制结构和工艺
- Patent Title: CPP device with improved current confining structure and process
- Patent Title (中): CPP器件具有改进的电流限制结构和工艺
-
Application No.: US13691813Application Date: 2012-12-02
-
Publication No.: US08477462B2Publication Date: 2013-07-02
- Inventor: Kunliang Zhang , Min Li , Yue Liu
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/33
- IPC: G11B5/33
Abstract:
Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided.
Public/Granted literature
- US20130088797A1 CPP Device with Improved Current Confining Structure and Process Public/Granted day:2013-04-11
Information query
IPC分类:
