Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12953659Application Date: 2010-11-24
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Publication No.: US08477520B2Publication Date: 2013-07-02
- Inventor: Yuki Hosoe , Kazuki Ishizuka
- Applicant: Yuki Hosoe , Kazuki Ishizuka
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2009-274494 20091202
- Main IPC: G11C5/02
- IPC: G11C5/02
Abstract:
A semiconductor device includes a first amplifier circuit, a second amplifier circuit, first and second bit lines coupled to the first amplifier circuit, third and fourth bit lines coupled to the second amplifier circuit, a first equalizer circuit being coupled to the first and second bit lines, and a second equalizer circuit being coupled between the second and third bit lines. The second equalizer circuit being closer to the second amplifier circuit than the first equalizer circuit, the first equalizer circuit being closer to the first amplifier circuit than the second equalizer circuit.
Public/Granted literature
- US20110128764A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-06-02
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