Invention Grant
- Patent Title: Fuse circuit and memory device including the same
- Patent Title (中): 保险丝电路和包括其的存储器件
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Application No.: US12981290Application Date: 2010-12-29
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Publication No.: US08477521B2Publication Date: 2013-07-02
- Inventor: Kwi-Dong Kim , Jun-Gi Choi
- Applicant: Kwi-Dong Kim , Jun-Gi Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0100751 20101015
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C7/00 ; G11C17/18 ; G11C8/00
Abstract:
A fuse circuit includes a plurality of fuse cells, an amplification unit, and a plurality of registers. The amplification unit is configured to sequentially amplify data stored in the fuse cells. The registers are configured to sequentially store data amplified by the amplification unit.
Public/Granted literature
- US20120092947A1 FUSE CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2012-04-19
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