Nonvolatile memory devices are provided including a memory cell array having a plurality of stacked memory layers and a rectifier configured to select memory cells constituting each memory layer sharing a word line or a bit line with another adjacent memory layer. The nonvolatile memory devices including a word line driving unit configured to drive a first word line, connected to a first memory cell of a first memory layer to be read, at a first voltage level and drive a second word line, connected to a second memory cell of a second memory layer sharing a first bit line connected to the first memory cell, at a second voltage level. The nonvolatile memory device further includes a bit line biasing unit configured to bias the first bit line at the second voltage level and bias a second bit line, connected to a third memory cell of a third memory layer sharing the first word line, at the first voltage level. Related methods and systems are also provided herein.