Invention Grant
US08477525B2 Nonvolatile semiconductor memory and manufacturing method of nonvolatile semiconductor memory
有权
非易失性半导体存储器和非易失性半导体存储器的制造方
- Patent Title: Nonvolatile semiconductor memory and manufacturing method of nonvolatile semiconductor memory
- Patent Title (中): 非易失性半导体存储器和非易失性半导体存储器的制造方
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Application No.: US13047067Application Date: 2011-03-14
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Publication No.: US08477525B2Publication Date: 2013-07-02
- Inventor: Hiroshi Ito
- Applicant: Hiroshi Ito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-063300 20100318
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
According to one embodiment, a nonvolatile semiconductor memory includes word lines, bit lines, memory cells, a dummy word line, a dummy bit line and dummy cells. The word lines and the bit lines cross. The memory cells are provided for each intersection of the word lines and bit lines. Each memory cell includes a first diode and a resistance change memory element. The dummy word line crosses the bit lines. The dummy bit line crosses the word lines. The dummy cells are provided at each intersection of the dummy word line and the bit lines, and at each intersection of the dummy bit line and the word lines. Each dummy cell includes a second diode.
Public/Granted literature
- US20110228587A1 NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY Public/Granted day:2011-09-22
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