Invention Grant
US08477531B2 Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current
有权
磁盘底座中的自旋转矩磁阻随机存取存储器，具有降低的阈值电流
- Patent Title: Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current
- Patent Title (中): 磁盘底座中的自旋转矩磁阻随机存取存储器，具有降低的阈值电流
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Application No.: US12969163Application Date: 2010-12-15
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Publication No.: US08477531B2Publication Date: 2013-07-02
- Inventor: Chwen Yu , Tien-Wei Chiang
- Applicant: Chwen Yu , Tien-Wei Chiang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A semiconductor memory device includes a magnetic tunneling junction (MTJ); and a magnetic feature aligned with the MTJ and approximate the MTJ. When viewed in a direction perpendicular to the MTJ and the magnetic feature, the magnetic feature has a disk shape, and the MTJ has an elliptical shape and is positioned within the disk shape.
Public/Granted literature
- US20120153411A1 SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY IN DISK BASE WITH REDUCED THRESHOLD CURRENT Public/Granted day:2012-06-21
Information query
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